New Product Si1958DH Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.205 at VGS = 4.5 V 1.3a 0.340 at VGS = 2.5 V 1.3a • TrenchFET® Power MOSFET Qg (Typ) 1.2 nC APPLICATIONS RoHS • Load Switch for Portable Applications SOT-363 SC-70 (6-LEADS) D1 S1 1 6 D1 G1 2 5 G2 COMPLIANT D2 D2 3 4 CC S2 XX YY Marking Code G1 G2 Lot Traceability and Date Code Part # Code S1 S2 N-Channel MOSFET N-Channel MOSFET Top View Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 20 ± 12 1.3a 1.3a 1.3a 1.2a 4 1.0 0.61c 1.25 0.8 TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IS PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Unit V A 0.74b, c 0.47b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter t ≤ 5 sec Maximum Junction-to-Ambientb, f Steady State Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 Board. c. t = 5 sec. d. Maximum under Steady State conditions is 220 °C/W. Document Number: 74340 S-70532-Rev. B, 26-Mar-07 Symbol RthJA RthJF Typical 130 80 Maximum 170 100 Unit °C/W www.vishay.com 1 New Product Si1958DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 20 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 18.5 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.6 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 ns VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea rDS(on) gfs VDS ≤ 5 V, VGS = 4.5 V - 3.2 0.6 4 µA A VGS = 4.5 V, ID = 1.3 A 0.165 0.205 VGS = 2.5 V, ID = 0.29 A 0.275 0.340 VDS = 4 V, ID = 1.3 A 5.5 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 105 VDS = 10 V, VGS = 0 V, f = 1 MHz 26 VDS = 10 V, VGS = 10 V, ID = 1.5 A 2.5 3.8 1.2 1.8 pF 15 VDS = 10 V, VGS = 4.5 V, ID = 1.6 A 0.4 0.3 Ω f = 1 MHz 4 8 12 VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 25 40 10 15 tf 10 15 td(on) 5 10 10 15 td(on) tr td(off) tr td(off) nC VDD = 10 V, RL = 8.3 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω tr 10 15 8 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 1 4 IS = 1.2 A, VGS = 0 V A 0.85 1.2 Body Diode Reverse Recovery Time trr 20 40 ns Body Diode Reverse Recovery Charge Qrr 15 30 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.2 A, di/dt = 100 A/µs, TJ = 25 °C 16 4 V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 1.0 VGS = 10 V thru 3.5 V VGS = 3 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 3 VGS = 2.5 V 2 1 0.6 0.4 TC = 25 °C 0.2 VGS = 2 V TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 160 0.4 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 1.0 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 120 Ciss 80 40 Coss 0.1 0.0 Crss 0 0 1 2 3 4 0 4 ID - Drain Current (A) 8 12 16 20 VDS - Drain-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 1.6 8 VGS = 4.5 V, 2.5 V ID = 1.3 A VDS = 10 V rDS(on) – On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 1.5 A 6 VDS = 16 V 4 2 0 0.0 1.4 1.2 1.0 0.8 0.5 1.0 1.5 2.0 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74340 S-70532-Rev. B, 26-Mar-07 2.5 3.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.50 10 ID = 1.3 A 0.45 rDS(on) - On-Resistance (Ω) I S − Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.40 0.35 TA = 125 °C 0.30 0.25 TA = 25 °C 0.20 0.15 0.10 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0 1 VSD − Source-to-Drain Voltage (V) 3 4 5 On-Resistance vs. Gate-Source Voltage Forward Diode Voltage 1.4 5 1.3 4 1.2 ID = 250 µA 3 Power (W) V GS(th) Variance (V) 2 VGS - Gate-to-Source Voltage (V) 1.1 1.0 2 0.9 1 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (sec) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 10 *Limited by rDS(on) IDM Limited 100 µs I D – Drain Current (A) ID(on) Limited 1 1 ms 10 ms 0.1 T A = 25 °C Single Pulsed 100 ms 1s 10 s DC BVDSS Limited 0.01 0.1 1 *VGS 10 100 VDS – Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 1.4 1.2 1.5 Power Dissipation (W) ID - Drain Current (A) 2.0 Package Limited 1.0 1.0 0.8 0.6 0.4 0.5 0.2 0.0 0.0 0 25 50 75 100 125 150 25 TC - Case Temperature (°C) 50 75 100 125 150 T C - Case Temperature (°C) Power Derating Current Derating* *The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 74340 S-70532-Rev. B, 26-Mar-07 www.vishay.com 5 New Product Si1958DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74340. www.vishay.com 6 Document Number: 74340 S-70532-Rev. B, 26-Mar-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1