Inchange Semiconductor Product Specification 2SB849 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1110 ・Wide area of safe operation APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 D N O IC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO M E S E PARAMETER R O T UC VALUE UNIT Open emitter -120 V Collector-emitter voltage Open base -120 V Emitter-base voltage Open collector -7 V -7 A 80 W G N A INCH Collector-base voltage CONDITIONS IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB849 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(BR) Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 导体 半 电 CONDITIONS 固 COB Output capacitance fT Transition frequency IN 2 MAX UNIT V 200 TOR C U D ON IC M E ES G N A CH TYP. -120 IE=0 ; VCB=-10V;f=1MHz IC=-0.2A ; VCE=-5V MIN 340 14 pF MHz Inchange Semiconductor Product Specification 2SB849 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3