Inchange Semiconductor Product Specification 2SC3296 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Wide area of safe operation ・Complement to type 2SA1304 APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 150 V Emitter-base voltage Open collector 5 V A H C IN IC Collector current 1.5 A IB Base current 0.5 A PC Collector power dissipation Ta=25℃ 2 W TC=25℃ 20 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3296 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.5 V VBE Base-emitter on voltage IC=0.5A ; VCE=10V 0.85 V ICBO Collector cut-off current VCB=120V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.5A ; VCE=10V COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency 体 导 半 固电 CONDITIONS A H C IN 2 TYP. MAX 150 UNIT V 40 140 35 pF 4 MHz R O T UC D N O IC IC=0.5A ; VCE=10V EM S E NG MIN Inchange Semiconductor Product Specification 2SC3296 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 R O T UC Inchange Semiconductor Product Specification 2SC3296 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC