SSM3J317T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J317T ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: Ron = 306 mΩ (max) (@VGS = -1.8 V) : Ron = 144 mΩ (max) (@VGS = -2.8 V) : Ron = 107 mΩ (max) (@VGS = -4.5 V) +0.2 2.8-0.3 -20 V ±8 V VGSS DC ID (Note 1) -3.6 Pulse IDP (Note 1) -7.2 PD (Note 2) 700 Drain power dissipation t = 5s A mW 1400 Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 0.4±0.1 ２ ３ 0.16±0.05 VDSS １ 0.15 Drain current Unit 0～0.1 Gate-Source voltage Rating 0.95 Drain-Source voltage Symbol 0.7±0.05 Characteristics 2.9±0.2 Absolute Maximum Ratings (Ta = 25°C) 1.9±0.2 +0.2 1.6-0.1 0.95 • • 1: Gate 2: Source Note: Using continuously under heavy loads (e.g. the application of TSM 3: Drain high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ― operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA ― Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling TOSHIBA 2-3S1A Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 10 mg (typ.) etc). Note 1: The junction temperature should not exceed 150°C during use. Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Characteristics Drain-Source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = 8 V -12 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -1.0 A (Note 3) 2.2 4.4 ⎯ S ID = -1.0 A, VGS = -4.5 V Drain–source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance (Note 3) ⎯ 83 107 ID = -0.75 A, VGS = -2.8 V (Note 3) ⎯ 107 144 ID = -0.5 A, VGS = -1.8 V ⎯ 170 306 ⎯ 390 ⎯ ⎯ 67 ⎯ ⎯ (Note 3) VDS = -10 V, VGS = -0 V, f = 1 MHz Crss ⎯ 55 Total Gate Charge Qg ⎯ 9.6 ⎯ Gate-Source Charge Qgs ⎯ 6.6 ⎯ Gate-Drain Charge Qgd ⎯ 3.0 ⎯ 17 ⎯ Switching time VDS = -10 V, IDS= -3.6 A VGS = -4 V Turn-on time ton VDD = -10 V, ID = -1.0 A ⎯ Turn-off time toff VGS = 0 to -2.5 V, RG = 4.7 Ω ⎯ 19.5 ⎯ ID = 3.6 A, VGS = 0 V ⎯ 0.9 1.2 Drain-Source forward voltage VDSF (Note 3) mΩ pF nC ns V Note3: Pulse test 1 2008-10-22 SSM3J317T Switching Time Test Circuit (a) Test Circuit 0 10% 90% −2.5 V RG 10 μs 0V OUT IN −2.5 V (b) VIN VDS (ON) 90% (c) VOUT VDD = −10 V RG = 4.7Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD 10% VDD tr ton tf toff Equivalent Circuit (top view) 3 3 KDV 1 2 1 2 Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the Q2 of the SSM3J317T). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-10-22 SSM3J317T ID – VDS -3.0V -2.8V -4.5V -8V -6.0 (A) Common Source Ta = 25 °C ID – VGS -10 -2.5V ID -1.8 V -4.0 Drain current Drain current ID (A) -8.0 -1.5 V -2.0 Common Source VDS = -3 V -1 Ta = 100 °C -0.1 − 25 °C -0.01 25 °C -0.001 VGS=-1.2 V 0 0 -0.2 -0.4 -0.6 -0.8 Drain–source voltage VDS -0.0001 0 -1 -1.0 (V) Gate–source voltage RDS (ON) – VGS -3.0 VGS (V) RDS (ON) – ID 500 500 ID =-1.0A Common Source Ta = 25°C Common Source Ta = 25°C 400 Drain–source ON-resistance RDS (ON) (mΩ) Drain–source ON-resistance RDS (ON) (mΩ) -2.0 300 200 25 °C Ta = 100 °C 100 400 300 200 -1.8 V -2.8 V 100 VGS = -4.5 V − 25 °C 0 0 -2 -4 -6 Gate–source voltage VGS 0 -8 0 (V) -2.0 Drain current RDS (ON) – Ta ID -8.0 (A) Vth – Ta Common Source Vth (V) Common Source 400 Gate threshold voltage Drain–source ON-resistance RDS (ON) (mΩ) -6.0 -1.0 500 300 -0.75 A / -2.8 V -0.5A / -1.8 V 200 100 0 −50 -4.0 ID = -1.0 A / VGS = -4.5 V 0 50 Ambient temperature 100 Ta VDS = -3 V ID = -1 mA -0.5 0 −50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2008-10-22 SSM3J317T (S) IDR – VDS |Yfs| – ID 10 10 Common Source (A) ⎪Yfs⎪ VDS = -3 V Ta = 25°C IDR Drain reverse current Forward transfer admittance 3 1 0.3 Common Source VGS = 0 V D 1 IDR G S 0.1 Ta =100 °C 25 °C 0.01 −25 °C 0.1 -0.01 -1 -0.1 Drain current ID 0.001 0 -10 (A) 0.4 0.6 Drain–source voltage C – VDS 1000 0.2 0.8 1.0 VDS 1.2 (V) t – ID 1000 Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 4.7Ω (pF) 500 toff Ciss 100 tf t Capacitance C (ns) 300 Switching time 100 Coss Crss 50 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 30 10 -0.1 -1 -10 Drain–source voltage tr 1 -0.01 -100 VDS ton 10 (V) -0.1 Drain current -1 ID -10 (A) Dynamic Input Characteristic -8 Gate–source voltage VGS (V) Common Source ID = -3.6 A Ta = 25°C -6 -4 VDD = - 10 V VDD = - 16 V -2 0 0 4 8 12 Total Gate Charge 16 Qg 20 (nC) 4 2008-10-22 SSM3J317T rth – tw PD – Ta 1000 Drain power dissipation PD (mW) Transient thermal impedance rth (°C/W) 1000 b 100 a 10 1 0.001 a: Mounted on FR4 Board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) b: Mounted on FR4 Board (25.4 mm × 25.4 mm × 1.6 mm, 2 Cu Pad: 0.8 mm ×3) 0.01 0.1 1 Pulse width 10 tw 100 800 a 600 400 (s) b 200 0 -40 1000 a: Mounted on FR4 Board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) b: Mounted on FR4 Board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.8 mm2×3) -20 0 20 40 60 80 Ambient temperature 5 100 120 140 160 Ta (°C) 2008-10-22 SSM3J317T RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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