FDD6682/FDU6682 June 2004 FDD6682/FDU6682 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. • 75 A, 30 V RDS(ON) = 6.2 mΩ @ VGS = 10 V RDS(ON) = 8.0 mΩ @ VGS = 4.5 V • Low gate charge • Fast switching Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • Motor Drives D D G S I-PAK (TO-251AA) D-PAK TO-252 (TO-252) G D S Absolute Maximum Ratings Symbol G S TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 ID Drain Current PD Power Dissipation for Single Operation – Continuous – Pulsed (Note 3) 75 (Note 1a) 100 (Note 1) 71 (Note 1a) 3.8 W 1.6 (Note 1b) TJ, TSTG A Operating and Storage Junction Temperature Range –55 to +175 °C °C/W Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking Device Package FDD6682 FDD6682 FDU6682 FDU6682 2004 Fairchild Semiconductor Corporation Reel Size Tape width Quantity D-PAK (TO-252) 13’’ 12mm 2500 units I-PAK (TO-251) Tube N/A 75 FDD6682/FDU6682 Rev H(W) Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 240 mJ 17 A Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID = 17 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage On Characteristics VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C Static Drain–Source On–Resistance VGS = 10 V, ID = 17 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 17 A, TJ=125°C ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 17 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz ∆VGS(th) ∆TJ RDS(on) V 20 mV/°C 1 ±100 µA nA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VGS(th) 30 ID = 250 µA, Referenced to 25°C 1 1.9 –7 5.2 6.4 8.0 3 V mV/°C 6.2 8 11.9 50 mΩ A 65 S 2400 pF 577 pF 258 pF 1.4 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics (Note 2) td(on) Turn–On Delay Time 14 20 ns tr Turn–On Rise Time 12 37 ns td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 15 V, VGS = 10 V, VDS = 15V, VGS = 5 V ID = 1 A, RGEN = 6 Ω ID = 17 A, 38 64 ns 18 32 ns 24 31 nC 6.5 nC 8.1 nC FDD6682/FDU6682 Rev H(W) FDD6682/FDU6682 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units 3.2 A 0.7 1.2 V Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IF = 17 A, IS = 3.2 A (Note 2) diF/dt = 100 A/µs 32 nS 20 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 2 1in pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6682/FDU6682 Rev H(W) FDD6682/FDU6682 Electrical Characteristics (continued) FDD6682/FDU6682 Typical Characteristics 100 2 VGS = 3.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS=10V 80 6.0V 4.5V 3.5V 60 40 3.0V 20 1.8 1.6 4.0V 1.4 4.5V 5.0V 1.2 10V 1 0.8 0 0 1 2 0 3 20 40 Figure 1. On-Region Characteristics. 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.02 ID = 17A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.6 1.4 1.2 1 0.8 ID = 8.5A 0.015 TA = 125oC 0.01 TA = 25oC 0.005 0 0.6 -50 -25 0 25 50 75 100 125 150 2 175 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 80 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V 60 40 20 TA =125oC 25oC -55oC 0 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6682/FDU6682 Rev H(W) 3500 15V CISS 3000 8 20V 6 4 2500 2000 COSS 1500 1000 CRSS 2 500 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 Figure 7. Gate Charge Characteristics 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 100 100µs RDS(ON) LIMIT 1ms 10ms 10 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 60 40 20 0 0.01 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 0.1 1 10 100 1000 t1, TIME (sec) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V VDS = 10V ID = 17A CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6682/FDU6682 Rev H(W) FDD6682/FDU6682 Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11