FDS7066N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. • 23 A, 30 V Applications • High power and current handling capability • Synchronous rectifier • Fast switching RDS(ON) = 4.5 mΩ @ VGS = 10 V RDS(ON) = 5.5 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size 5 Absolute Maximum Ratings Symbol Bottom-side Drain Contact 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±16 V ID Drain Current (Note 1a) 23 A PD Power Dissipation for Single Operation (Note 1a) 3.0 (Note 1b) 1.7 – Continuous – Pulsed TJ, TSTG 60 Operating and Storage Junction Temperature Range –55 to +150 W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 40 °C/W (Note 1) 0.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7066N7 FDS7066N7 13’’ 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDS7066N7 Rev D3 (W) FDS7066N7 February 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 nA 3 V BVDSS ∆BVDSS ∆TJ IDSS On Characteristics VGS(th) 30 ID = 250 µA, Referenced to 25°C V 24 mV/°C (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance gFS Forward Transconductance VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, 1 1.5 –4.3 3.5 4.0 5.0 116 ID = 23 A ID = 21 A ID = 23 A, TJ = 125°C ID = 23 A mV/°C 4.5 5.5 6.3 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 4973 pF 826 pF 341 pF (Note 2) VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 VDS = 15 V, ID = 23 A, VGS = 5.0 V 22 ns 8 16 ns 85 136 ns 25 40 ns 43 69 nC 13 nC 11 nC Drain–Source Diode Characteristics and Maximum Ratings trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VSD VGS = 0 V, IS = 2.5 A 0.7 (Note 2) IF = 23 A, diF/dt = 100 A/µs 1.2 V 34.2 nS 40.4 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7066N7 Rev D3 (W) FDS7066N7 Electrical Characteristics FDS7066N7 Typical Characteristics 60 2.2 VGS = 10V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 3.5V 3.0V 40 30 2.5V 20 10 0 0 0.25 0.5 0.75 1 2 1.8 VGS = 3.0V 1.6 3.5V 1.4 4.0V 6.0V 10V 1 0.8 1.25 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 0.014 ID = 11.5A ID = 23A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 0.012 0.01 0.008 TA = 125oC 0.006 0.004 TA = 25oC 0.002 0 -50 -25 0 25 50 75 100 125 150 175 2 4 o TJ, JUNCTION TEMPERATURE ( C) 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 60 IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V 50 40 30 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. ID, DRAIN CURRENT (A) 4.5V 1.2 TA = 125oC 20 25oC 10 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS7066N7 Rev D3 (W) FDS7066N7 Typical Characteristics 6400 VDS = 5V ID = 23A 10V 8 5600 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 4800 4000 3200 2400 1600 COSS 800 0 CRSS 0 0 10 20 30 40 50 60 70 80 90 0 Qg, GATE CHARGE (nC) 6 12 24 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 50 100µs RDS(ON) LIMIT 1ms 10 10ms 100ms 1s DC 1 VGS = 10V SINGLE PULSE RθJA = 85oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 30 20 10 0 0.01 100 SINGLE PULSE RθJA = 85°C/W TA = 25°C 40 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 18 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA 0.2 0.1 o RθJA = 85 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS7066N7 Rev D3 (W) FDS7066N7 Dimensional Outline and Pad Layout FDS7066N7 Rev D3 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ FRFET™ DOME™ GlobalOptoisolator™ EcoSPARK™ GTO™ E2CMOSTM HiSeC™ EnSignaTM I2C™ FACT™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8