FAIRCHILD 2N5210

2N5210/MMBT5210
2N5210/MMBT5210
NPN General Purpose Amplifier
C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
C
BE
E
TO-92
B
SOT-23
Mark: 3M
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
50
V
Collector-Base Voltage
50
V
Emitter-Base Voltage
4.5
V
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
VCEO
Collector-Emitter Voltage
VCBO
VEBO
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 2002 Fairchild Semiconductor Corporation
Max.
2N5210
625
5.0
83.3
MMBT5210
350
2.8
200
357
Units
mW
mW/°C
°C/W
°C/W
2N5210, Rev B
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
50
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 0.1 mA, IE = 0
50
ICBO
Collector Cutoff Current
VCB = 35 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
V
2N5210/MMBT5210
NPN General Purpose Amplifier
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 µA, VCE = 5.0 V
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
VBE(on)
Base-Emitter On Voltage
IC = 1.0 mA, VCE = 5.0 V
200
250
250
600
0.7
V
0.85
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Ccb
Collector-Base Capacitance
hfe
Small-Signal Current Gain
NF
Noise Figure
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
IC = 500 µA,VCE = 5.0 V,
f= 20 MHz
VCB = 5.0 V, IE = 0, f = 100 kHz
30
IC = 1.0 mA, VCE = 5.0 V,
f = 1.0 kHz
IC = 20 µA, VCE = 5.0 V,
RS = 22 kΩ, f = 10 Hz to 15.7 kHz
IC = 20 µA, VCE = 5.0 V,
RS = 10 kΩ, f = 1.0 kHz
250
MHz
4.0
pF
900
2.0
dB
3.0
dB
3
(continued)
Typical Pulsed Current Gain
vs Collector Current
1200
V C E = 5.0V
o
125 C
1000
800
o
25 C
600
400
o
- 40 C
200
0
0.01
0.03
0.3
0.1
3
1
30
10
100
VBEON - BASE-EMITTER ON VOLTAGE (V)
hFE - TYPICAL PULSED CURRENT GAIN
Typical Characteristics
Collector-Emitter Saturation
Voltage vs Collector Current
0.30
0.25
β = 10
0.20
o
125 C
0.15
o
25 C
0.10
0.05
o
- 40 C
0.1
1
o
- 40 C
0.8
o
25 C
o
125 C
0.4
β = 10
0.2
0.1
1
10
100
VBEON - BASE-EMITTER ON VOLTAGE (V)
1.0
1.0
o
0.8
- 40 C
o
25 C
0.6
o
125 C
0.4
V C E = 5.0V
0.2
0.1
1
10
I C - COLLECTO R CURRENT (m A)
Collector-Cutoff Current
vs Ambient Temperature
10
VCB = 45V
1
0.1
25
100
Base-Emitter ON Voltage vs
Collector Current
I C - COLLECTO R CURRENT (mA)
I CBO - COLLE CTOR CURRENT (nA)
VBESAT - COLLECTOR-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
0.6
10
I C - COLLECTOR CURR EN T (m A)
I C - COLLECTOR CURRENT (m A)
50
75
100
125
T A - AMBIE NT TEMP ERATURE ( ° C)
150
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
Contours of Constant Gain
Bandwidth Product (f T )
V CE - COLLECTOR VOLTAGE (V)
5
CAPACITANCE (pF)
f = 1.0 MHz
4
3
C te
2
C ob
1
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
175 MHz
7
5
150 MHz
3
2
125 MHz
100 MHz
75 MHz
1
0.1
20
Normalized Collector-Cutoff Current
vs Ambient Temperature
°
1000
100
5
V CE = 5.0 V
100
10
1
25
50
75
100
125
T A - AMBIE NT TEMPERATURE ( °C)
150
4
BANDWIDTH = 15.7 kHz
I C = 30 µA
2
1
I C = 10 µA
0
1,000
PD - POWER DISSIPATION (W)
I C = 1.0 mA,
R S = 500 Ω
I C = 1.0 mA,
Ω
R S = 5.0 kΩ
2
V CE = 5.0V
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10,000
20,000
50,000
100,000
1.00
I C = 100 µA,
Ω
R S = 10 kΩ
4
5,000
Base-Emitter Saturation
Voltage vs Collector Current
I C = 200 µA,
Ω
R S = 10 kΩ
6
2,000
R S - SOURCE RESISTANCE (Ω )
Noise Figure vs Frequency
8
3
I C = 100 µA
3
10
NF - NOISE FIGURE (dB)
1
10
I C - COLLECTOR CURRENT (mA)
Wideband Noise Frequency
vs Source Resistance
NF - NOISE FIGURE (dB)
CHARACTERIS TIC S RELATI VE TO VALUE AT T A = 25 C
0
10
2N5210/MMBT5210
NPN General Purpose Amplifier
10
100
0.75
TO-92
0.50
SOT-23
0.25
0.00
0
25
50
75
100
o
TEMPERATURE ( C)
125
150
(continued)
Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
10,000
R S - SOURCE RESISTANCE ( Ω )
R S - SOURCE RESISTANCE ( Ω )
Contours of Constant
Narrow Band Noise Figure
3.0 dB
5,000
4.0 dB
2,000
6.0 dB
1,000
8.0 dB
500
V CE = 5.0 V
200
f = 100 Hz
BANDWIDTH
= 20 Hz
10 dB
12 dB
14 dB
100
1
10,000
5,000
2.0 dB
2,000
3.0 dB
1,000
4.0 dB
500
V CE = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
200
1
1,000
10000
1.0 dB
2.0 dB
3.0 dB
1000
4.0 dB
500
V CE = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
200
100
1
6.0 dB
10
100
I C - COLLECTOR CURRENT ( µ A)
10
100
I C- COLLECTOR CURRENT ( µ A)
1,000
Contours of Constant
Narrow Band Noise Figure
8.0 dB
1000
R S - SOURCE RESISTANCE (Ω )
R S - SOURCE RESISTANCE (Ω )
Contours of Constant
Narrow Band Noise Figure
2000
8.0 dB
100
10
100
I C - COLLECTOR CURRENT ( µ A)
5000
6.0 dB
10000
5000
2000
1000
2.0 dB
3.0 dB
VCE =
4.0 dB
5.0V
f = 1.0 MHz
200 BANDWIDTH
7.0 dB
= 200kHz
8.0 dB
100
0.01
0.1
1
I C - COLLECTOR CURRENT ( µ A)
500
5.0
dB
6.0
dB
10
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
h fe
1.3
h ie
h oe
1.2
h re
1.1
h oe
h re
1 h ie
0.9
0.8
I C = 1.0mA
f = 1.0kHz
T A = 25°C
h fe
0
5
10
15
20
V CE - COLLECTOR VOLTAGE (V)
25
Typical Common Emitter Characteristics
CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C)
1.4
1.5
1.4
1.3
1.2
h ie
VCE = 5.0V
f = 1.0kHz
I C = 1.0mA
h re
h fe
h oe
1.1
1
0.9
0.8
h oe
0.7
h fe
0.6
h re
0.5
-100
h ie
-50
0
50
100
T J - JUNCTIO N TEMP ERATURE (° C)
150
Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE TO VALUE(I C =1mA)
CHARACTERISTI CS RELATI VE TO VALUE(VCE =5V)
Typical Common Emitter Characteristics
(f = 1.0 kHz)
2N5210/MMBT5210
NPN General Purpose Amplifier
100
f = 1.0kHz
h oe
10
h ie and h re
h re
3
1 h oe
h fe
h ie
0.1
0.01
0.1
0.2
h fe
0.5 1
2
5
10 20
I C - COLLECTOR CURRENT (mA)
50
100
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with instructions for use provided in the labeling, can be
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4