MMBT3906 PZT3906 C C E E C B C TO-92 E SOT-23 B B SOT-223 Mark: 2A PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max Units 2N3906 625 5.0 83.3 *MMBT3906 350 2.8 **PZT3906 1,000 8.0 200 357 125 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. 2001 Fairchild Semiconductor Corporation 2N3906/MMBT3906/PZT3906, Rev A 2N3906 / MMBT3906 / PZT3906 2N3906 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA V ON CHARACTERISTICS hFE DC Current Gain * VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 100 60 30 0.65 300 0.25 0.4 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance NF Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz VEB = 0.5 V, IC = 0, f = 100 kHz IC = 100 µA, VCE = 5.0 V, RS =1.0kΩ,f=10 Hz to 15.7 kHz 250 MHz 4.5 pF 10.0 pF 4.0 dB SWITCHING CHARACTERISTICS td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns tf Fall Time IB1 = IB2 = 1.0 mA 75 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) 250 V CE = 1 .0V 125 °C 200 150 25 °C 100 50 0.1 - 40 °C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 β = 10 0.25 0.2 0.15 25 °C 0.1 125°C 0.05 0 - 40 °C 1 1 0.8 - 40 °C 125 °C 0.4 = 25V 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 10 C obo CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) V CE = 1V 0.2 Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 1 0.1 0.01 25 25 °C 0.6 100 CB 200 Base Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 10 100 I C - COLLECTOR CURRENT (mA) 50 75 100 TA - AMBIE NT TEMP ERATURE (° C) 125 8 6 4 C ibo 2 0 0.1 1 REVERSE BIAS VOLTAGE (V) 10 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 6 12 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 3 I C = 100 µA, R S = 200Ω 2 I C = 1.0 mA, R S = 200Ω 1 I C = 100 µA, R S = 2.0 kΩ 0 0.1 1 10 f - FREQUENCY (kHz) V CE = 5.0V f = 1.0 kHz 10 I C = 1.0 mA 8 6 4 I C = 100 µA 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) Switching Times vs Collector Current Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 Ic t off I = I = B1 B2 10 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 1 100 1 I 10 - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 100 SOT-223 0.75 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 100 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier (continued) Typical Characteristics Input Impedance Voltage Feedback Ratio ) 10 100 h ie - INPUT IMPEDANCE (k Ω) _ 4 h re - VOLTAGE FEEDBACK RATIO (x10 (continued) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 1 0.1 0.1 10 1 I C - COLLECTOR CURRENT (mA) 10 Current Gain 1000 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( µmhos) Output Admittance 1000 VCE = 10 V f = 1.0 kHz 100 V CE = 10 V f = 1.0 kHz 200 100 50 20 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G