ISC 2SC2690A

Inchange Semiconductor
Product Specification
2SC2690 2SC2690A
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SA1220/1220A
APPLICATIONS
・For use in audio and radio frequency
power amplifiers
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SC2690
VCBO
Collector-base voltage
120
Open base
2SC2690A
VEBO
Emitter-base voltage
V
160
2SC2690
Collector-emitter voltage
UNIT
120
Open emitter
2SC2690A
VCEO
VALUE
160
Open collector
V
V
5
V
IC
Collector current
1.2
A
ICM
Collector current-Peak
2.5
A
IB
Base current
0.3
A
PD
Total power dissipation
Ta=25℃
1.2
TC=25℃
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~+150
℃
Inchange Semiconductor
Product Specification
2SC2690 2SC2690A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
MAX
UNIT
IC=1A; IB=0.2A
0.7
V
Base-emitter saturation voltage
IC=1A ;IB=0.2A
1.3
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1
μA
hFE-1
DC current gain
IC=5mA ; VCE=5V
35
hFE-2
DC current gain
IC=0.3A ; VCE=5V
60
Cob
Output capacitance
IE=0 ; VCB=10V f=1MHz
19
pF
fT
Transition frequency
IC=0.2A ; VCE=5V
155
MHz
‹
CONDITIONS
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320
2
MIN
TYP.
320
Inchange Semiconductor
Product Specification
2SC2690 2SC2690A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC2690 2SC2690A
Silicon NPN Power Transistors
4