Inchange Semiconductor Product Specification 2SA1232 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC3012 APPLICATIONS ·Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -130 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A ICM Collector current-peak -15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1232 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS TYP. MAX UNIT IC=-5A; IB=-0.5A -0.6 -1.5 V Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 -2.0 V ICBO Collector cut-off current VCB=-130V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-2A ; VCE=-5V 60 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 Classifications R Q P 60-120 100-200 160-320 2 MIN 320 Inchange Semiconductor Product Specification 2SA1232 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3