Inchange Semiconductor Product Specification 2SC3423 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1360 ・High transition frequency APPLICATIONS ・Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER D N O IC R O T UC VALUE UNIT Open emitter 150 V Collector-emitter voltage Open base 150 V Emitter-base voltage Open collector 5 V Collector-base voltage INC CONDITIONS IC Collector current 50 mA IB Base current 5 mA PD Total power dissipation Ta=25℃ 1.2 TC=25℃ 5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SC3423 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=10mA; IB=1mA 1.0 V VBE Base-emitter on voltage IC=10mA ; VCE=5V 0.8 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=10mA ; VCE=5V Cob Output capacitance IE=0 ; VCB=10V f=1MHz fT Transition frequency 体 导 半 固电 EM S E NG hFE Classifications O 80-160 Y IC=10mA ; VCE=5V A H C IN 120-240 2 150 UNIT V 80 240 1.8 D N O IC R O T UC 200 pF MHz Inchange Semiconductor Product Specification 2SC3423 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN Fig.2 Outline dimensions 3 D N O IC R O T UC Inchange Semiconductor Product Specification 2SC3423 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC