Inchange Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1506 ・Low collector saturation voltage APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Emitter-base voltage CONDITIONS VALUE UNIT Open emitter -60 V Open base -50 V Open collector -5 V -3 A -4.5 A 10 W M E S GE N A H INC Collector-emitter voltage D N O IC R O T UC IC Collector current ICM Collector current-peak PD Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.5A ; VCE=-3V Output capacitance IE=0 ; VCB=-10V,f=1MHz COB 导体 半 电 固 fT CONDITIONS G N A CH IN IC=-0.5A ; VCE=-5V hFE Classifications N 56-120 P Q R 82-180 120-270 180-390 2 TYP. MAX R O T UC 56 OND IC M E ES Transition frequency MIN UNIT 390 50 pF 70 MHz Inchange Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3