Inchange Semiconductor Product Specification 2SC4205 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ;high speed APPLICATIONS ·For use in high voltage and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 5 A 40 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4205 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V ICBO Collector cut-off current VCB=400V ; IE=0 10 μA IEBO Emitter cut-off current VCE=7V ; IB=0 10 μA hFE DC current gain IC=3A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. 16 MAX UNIT 50 15 MHz Inchange Semiconductor Product Specification 2SC4205 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3