ISC BD943

Inchange Semiconductor
Product Specification
BD943
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·High current capability
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
22
V
VCEO
Collector-emitter voltage
Open base
22
V
VEBO
Emitter-base voltage
Open collector
7
V
5
A
40
W
IC
Collector current
PC
Collector dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
BD943
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
22
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.2A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
1.2
V
ICBO
Collector cut-off current
VCB=22V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
50
μA
hFE
DC current gain
IC=0.5A ; VCE=1V
85
Transition frequency
IC=0.25A ; VCE=10V
3
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
475
MHz
Inchange Semiconductor
Product Specification
BD943
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3