Inchange Semiconductor Product Specification BD943 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High current capability APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 22 V VCEO Collector-emitter voltage Open base 22 V VEBO Emitter-base voltage Open collector 7 V 5 A 40 W IC Collector current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD943 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 22 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A 1.2 V ICBO Collector cut-off current VCB=22V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE DC current gain IC=0.5A ; VCE=1V 85 Transition frequency IC=0.25A ; VCE=10V 3 fT CONDITIONS 2 MIN TYP. MAX UNIT 475 MHz Inchange Semiconductor Product Specification BD943 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3