JMNIC 2SD1275A

Product Specification
www.jmnic.com
2SD1275 2SD1275A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220Fa package
・Complement to type 2SB949,2SB949A
・High forward current transfer ratio hFE
・High-speed switching
APPLICATIONS
・For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
2SD1275
VCBO
Collector-base voltage
60
Open base
2SD1275A
VEBO
Emitter-base voltage
IC
V
80
2SD1275
Collector-emitter voltage
UNIT
60
Open emitter
2SD1275A
VCEO
VALUE
V
80
Open collector
5
V
Collector current (DC)
2
A
ICM
Collector current-Peak
4
A
PC
Collector power dissipation
TC=25℃
35
Ta=25℃
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
www.jmnic.com
2SD1275 2SD1275A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO
VCEsat
PARAMETER
Collector-emitter
breakdown voltage
CONDITIONS
2SD1275
MIN
TYP.
MAX
UNIT
60
IC=30mA , IB=0
2SD1275A
V
80
Collector-emitter saturation voltage
IC=2A; IB=8mA
2.5
V
VBE
Base-emitter voltage
VCE=4V; IC=2A
2.8
V
ICBO
Collector cut-off current
1
mA
2
mA
2
mA
ICEO
2SD1275
VCB=60V; IE=0
2SD1275A
VCB=80V; IE=0
2SD1275
VCE=30V; IB=0
2SD1275A
VCE=40V; IB=0
Collector cut-off current
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
1000
hFE-2
DC current gain
IC=2A ; VCE=4V
2000
Transition frequency
IC=0.5A;
VCE=10V;f=1MHz
fT
10000
20
MHz
0.5
μs
4
μs
1
μs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=8mA
IB2=-8mA;VCC=50V
hFE-2 Classifications
Q
R
2000-5000
4000-10000
JMnic
Product Specification
www.jmnic.com
2SD1275 2SD1275A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic