Product Specification www.jmnic.com 2SD1275 2SD1275A Silicon NPN Power Transistors DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949,2SB949A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL PARAMETER CONDITIONS 2SD1275 VCBO Collector-base voltage 60 Open base 2SD1275A VEBO Emitter-base voltage IC V 80 2SD1275 Collector-emitter voltage UNIT 60 Open emitter 2SD1275A VCEO VALUE V 80 Open collector 5 V Collector current (DC) 2 A ICM Collector current-Peak 4 A PC Collector power dissipation TC=25℃ 35 Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification www.jmnic.com 2SD1275 2SD1275A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SD1275 MIN TYP. MAX UNIT 60 IC=30mA , IB=0 2SD1275A V 80 Collector-emitter saturation voltage IC=2A; IB=8mA 2.5 V VBE Base-emitter voltage VCE=4V; IC=2A 2.8 V ICBO Collector cut-off current 1 mA 2 mA 2 mA ICEO 2SD1275 VCB=60V; IE=0 2SD1275A VCB=80V; IE=0 2SD1275 VCE=30V; IB=0 2SD1275A VCE=40V; IB=0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 1000 hFE-2 DC current gain IC=2A ; VCE=4V 2000 Transition frequency IC=0.5A; VCE=10V;f=1MHz fT 10000 20 MHz 0.5 μs 4 μs 1 μs Switching times ton Turn-on time ts Storage time tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V hFE-2 Classifications Q R 2000-5000 4000-10000 JMnic Product Specification www.jmnic.com 2SD1275 2SD1275A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic