JMnic Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ・For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 10 A IB Base current 3 A PC Collector power dissipation TC=25℃ 80 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SC3507 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=50mH VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.6A 1.5 V ICBO Collector cut-off current VCB=1000V; IE=0 50 μA IEBO Emitter cut-off current VEB=7V; IC=0 50 μA hFE DC current gain IC=3A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V;f=1MHz fT CONDITIONS MIN TYP. MAX 800 UNIT V 6 6 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=3A; VCC=250V IB1=0.6A ,IB2=-1.2A 2 1.0 μs 2.5 μs 0.5 μs JMnic Product Specification 2SC3507 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 JMnic Product Specification 2SC3507 Silicon NPN Power Transistors 4