Product Specification www.jmnic.com 2N5559 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Excellent safe operating area APPLICATIONS ・For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case JMnic Product Specification www.jmnic.com 2N5559 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V VBE Base-emitter on voltage IC=10A ; VCE=4V 5.7 V ICEO Collector cut-off current VCE=140V; IB=0 5.0 mA ICEX Collector cut-off current VCE=120V; VBE(off)=1.5V TC=150℃ 2.0 10 mA IEBO Emitter cut-off current VEB=7V; IC=0 2.0 mA hFE DC current gain IC=5A ; VCE=5V JMnic 120 UNIT 20 V 60 Product Specification www.jmnic.com 2N5559 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) JMnic