JMNIC 2N5559

Product Specification
www.jmnic.com
2N5559
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・Excellent safe operating area
APPLICATIONS
・For industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
JMnic
Product Specification
www.jmnic.com
2N5559
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=2A
5.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
5.7
V
ICEO
Collector cut-off current
VCE=140V; IB=0
5.0
mA
ICEX
Collector cut-off current
VCE=120V; VBE(off)=1.5V
TC=150℃
2.0
10
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
2.0
mA
hFE
DC current gain
IC=5A ; VCE=5V
JMnic
120
UNIT
20
V
60
Product Specification
www.jmnic.com
2N5559
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic