ISC 2N3442

Inchange Semiconductor
Product Specification
2N3442
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·For industrial and commercial equipment
including high fidelity audio amplifiers,
series and shunt regulators and power
switches applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
160
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
117
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N3442
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=10A; IB=2A
5.0
V
VBE(on)
Base-emitter on voltage
IC=10A ; VCE=4V
5.7
V
ICEO
Collector cut-off current
VCE=140V; IB=0
200
mA
ICEX
Collector cut-off current
VCE=140V; VBE(off)=1.5V
TC=150℃
5.0
30
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=3A ; VCE=4V
20
hFE-2
DC current gain
IC=10A ; VCE=4V
7.5
Transition frequency
IC=2.0A ; VCE=4V;ft=40kHz
80
fT
2
140
UNIT
V
70
kHz
Inchange Semiconductor
Product Specification
2N3442
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3