Inchange Semiconductor Product Specification 2N3442 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area APPLICATIONS ·For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector power dissipation 117 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3442 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A 5.0 V VBE(on) Base-emitter on voltage IC=10A ; VCE=4V 5.7 V ICEO Collector cut-off current VCE=140V; IB=0 200 mA ICEX Collector cut-off current VCE=140V; VBE(off)=1.5V TC=150℃ 5.0 30 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=3A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 7.5 Transition frequency IC=2.0A ; VCE=4V;ft=40kHz 80 fT 2 140 UNIT V 70 kHz Inchange Semiconductor Product Specification 2N3442 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3