Inchange Semiconductor Product Specification 2SB1223 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD1825 ・High DC current gain. ・Large current capacity and wide ASO. ・DARLINGTON APPLICATIONS ・Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 体 半导 固电 Emitter D N O IC M E S GE Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO N A H INC PARAMETER R O T UC Fig.1 simplified outline (TO-220F) and symbol VALUE UNIT Open emitter -70 V Collector-emitter voltage Open base -60 V Emitter-base voltage Open collector -6 V Collector-base voltage CONDITIONS IC Collector current -4 A ICM Collector current-peak -6 A PC Collector dissipation TC=25℃ 20 Ta=25 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1223 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -70 V V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞ -60 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA VBEsat Base-emitter saturation voltage ICBO -1.5 V IC=-2A ; IB=-4mA -2.0 V Collector cut-off current VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V;IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-2V fT 导体 半 电 固 Transition frequency tstg Storage time tf IN 2 TOR C U D ON MHz 0.5 μs 1.4 μs 1.2 μs IC=500IB1=-500IB2=-2A VCC=-20V ,RL=10Ω Fall time 5000 20 IC M E ES G N A CH Turn-on time 2000 IC=-2A ; VCE=-5V Switching times ton -1.0 Inchange Semiconductor Product Specification 2SB1223 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3