ISC 2SB1223

Inchange Semiconductor
Product Specification
2SB1223
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220F package
・Complement to type 2SD1825
・High DC current gain.
・Large current capacity and wide ASO.
・DARLINGTON
APPLICATIONS
・Suitable for use in control of motor drivers,
printer hammer drivers,and constant-voltage
regulators.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
体
半导
固电
Emitter
D
N
O
IC
M
E
S
GE
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
N
A
H
INC
PARAMETER
R
O
T
UC
Fig.1 simplified outline (TO-220F) and symbol
VALUE
UNIT
Open emitter
-70
V
Collector-emitter voltage
Open base
-60
V
Emitter-base voltage
Open collector
-6
V
Collector-base voltage
CONDITIONS
IC
Collector current
-4
A
ICM
Collector current-peak
-6
A
PC
Collector dissipation
TC=25℃
20
Ta=25
2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1223
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-70
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=∞
-60
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ; IB=-4mA
VBEsat
Base-emitter saturation voltage
ICBO
-1.5
V
IC=-2A ; IB=-4mA
-2.0
V
Collector cut-off current
VCB=-40V;IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0
mA
hFE
DC current gain
IC=-2A ; VCE=-2V
fT
导体
半
电
固
Transition frequency
tstg
Storage time
tf
IN
2
TOR
C
U
D
ON
MHz
0.5
μs
1.4
μs
1.2
μs
IC=500IB1=-500IB2=-2A
VCC=-20V ,RL=10Ω
Fall time
5000
20
IC
M
E
ES
G
N
A
CH
Turn-on time
2000
IC=-2A ; VCE=-5V
Switching times
ton
-1.0
Inchange Semiconductor
Product Specification
2SB1223
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3