Inchange Semiconductor Product Specification 2SD1827 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1225 ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Suitable for use in cotrol of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 70 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-peak 15 A PC Collector dissipation TC=25℃ 30 W 2 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1827 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 70 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 60 V VCEsat Collector-emitter saturation voltage IC=5A ; IB=10mA VBEsat Base-emitter saturation voltage ICBO 0.9 1.5 V IC=5A ; IB=10mA 2.0 V Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=5A ; VCE=2V 2000 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4Ω 2 0.6 μs 3.0 μs 1.8 μs Inchange Semiconductor Product Specification 2SD1827 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3