Inchange Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=3A ·Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: ·Driver for high power outputs ·Series and shunt regulators ·Audio and servo amplifiers ·Solenoid and relay drivers ·Power switching circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A IB Base current 2 A PD Total power dissipation 25 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 7.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=2.7A; IB=0.9A 6.0 V VBE(on) Base -emitter on voltage IC=2.7A ; VCE=4V 6.7 V ICEX Collector cut-off current VCE=140V;VBE(off)=1.5V VCE=140V;VBE(off)=1.5V TC=150℃ 5.0 6.0 mA ICEO Collector cut-off current VCE=140V; IB=0 10 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.5A ; VCE=4V 25 hFE-2 DC current gain IC=2.7A ; VCE=4V 5 2 MIN TYP. MAX 140 UNIT V 100 Inchange Semiconductor Product Specification 2N3441 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3