Inchange Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・A wide variety of medium-to-high power, high-voltage applications ・Series and shunt regulators ・High-fidelity amplifiers ・Power switching circuits ・Solenoid drivers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2N6263 VCBO Collector-base voltage V 170 2N6263 Collector-emitter voltage 120 Open base V 2N6264 VEBO Emitter-base voltage UNIT 140 Open emitter 2N6264 VCEO VALUE 150 Open collector 7 V IC Collector current 3 A ICM Collector current-peak 4 A IB Base current 2 A PT Total power dissipation 2N6263 20 TC=25℃ W 2N6264 50 Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER 2N6263 8.75 2N6264 3.5 Thermal resistance junction to case ℃/W Inchange Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBE ICEX ICEO IEBO hFE-1 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage CONDITIONS 2N6263 Is/b MAX V 140 2N6264 2N6263 UNIT 120 IC=0.5A; IB=0.05A 1.2 V 2N6264 IC=1.0A; IB=0.1A 0.5 2N6263 IC=0.5A ; VCE=4V 2.0 2N6264 IC=1.0A ; VCE=2V 1.5 2N6263 VCE=120V; VBE(off)=-1.5V TC=150℃ 2 10 2N6264 VCE=150V; VBE(off)=-1.5V TC=150℃ 0.05 1.0 2N6263 VCE=100V;IB=0 5 2N6264 VCE=130V;IB=0 1 2N6263 VEB=5V; IC=0 2 2N6264 VEB=7V; IC=0 0.2 2N6263 IC=0.5 A ; VCE=4V 20 100 2N6264 IC=1A ; VCE=2V 20 60 Base -emitter on voltage V Collector cut-off current Collector cut-off current mA mA Emitter cut-off current mA DC current gain DC current gain 3 IC=3A ; VCE=2V 2N6264 fT TYP. IC=0.1 A ; IB=0 2N6263 hFE-2 MIN Transition frequency Second breakdown collector current with base forward biased 5 IC=0.2A ; VCE=4V 2N6263 2N6264 VCE=120Vdc,t=1.0s, Nonrepetitive 2 200 KHz 0.167 A 0.417 Inchange Semiconductor Product Specification 2N6263 2N6264 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3