Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Low saturation voltage ・Wide safe operating area APPLICATIONS ・Power switching circuits ・High-fidelity amplifers ・Solenoid drivers ・Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector 体 导 电半 固 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL N O C EMI PARAMETER CONDITIONS R O T DUC VALUE UNIT Open emitter 50 V NG S VCBO Collector-base voltage VCEO Collector-emitter voltage Open base 40 V VEBO Emitter-base voltage Open collector 7 V CHA IN IC Collector current 4 A IB Base current 2 A PT Total power dissipation 29 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 3.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.5 V VBE Base -emitter on voltage IC=1.5A ; VCE=2V 1.5 V ICEV Collector cut-off current VCE=40V;VBE(off)=-1.5V TC=150℃ 0.5 1.0 mA ICEO Collector cut-off current VCE=30V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.2 mA hFE-1 DC current gain IC=4A ; VCE=2V hFE-2 DC current gain IC=1.5A ; VCE=2V 体 导 电半 固 CONDITIONS 2 TYP. MAX 80 R O T UC 20 UNIT V 5 D N O C I M E S G N HA INC MIN 100 Inchange Semiconductor Product Specification 2N6260 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA Fig.2 Outline dimensions 3 R O T DUC