ISC 2N6260

Inchange Semiconductor
Product Specification
2N6260
Silicon NPN Power Transistors
DESCRIPTION
・With TO-66 package
・Low saturation voltage
・Wide safe operating area
APPLICATIONS
・Power switching circuits
・High-fidelity amplifers
・Solenoid drivers
・Series and shunt-regulator driver
and output stages
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
体
导
电半
固
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
N
O
C
EMI
PARAMETER
CONDITIONS
R
O
T
DUC
VALUE
UNIT
Open emitter
50
V
NG S
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
Open base
40
V
VEBO
Emitter-base voltage
Open collector
7
V
CHA
IN
IC
Collector current
4
A
IB
Base current
2
A
PT
Total power dissipation
29
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
3.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N6260
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.15A
1.5
V
VBE
Base -emitter on voltage
IC=1.5A ; VCE=2V
1.5
V
ICEV
Collector cut-off current
VCE=40V;VBE(off)=-1.5V
TC=150℃
0.5
1.0
mA
ICEO
Collector cut-off current
VCE=30V; IB=0
0.5
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
0.2
mA
hFE-1
DC current gain
IC=4A ; VCE=2V
hFE-2
DC current gain
IC=1.5A ; VCE=2V
体
导
电半
固
CONDITIONS
2
TYP.
MAX
80
R
O
T
UC
20
UNIT
V
5
D
N
O
C
I
M
E
S
G
N
HA
INC
MIN
100
Inchange Semiconductor
Product Specification
2N6260
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
电半
固
N
O
C
EMI
INC
S
G
N
HA
Fig.2 Outline dimensions
3
R
O
T
DUC