Inchange Semiconductor Product Specification 2N4864 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V (Min) APPLICATIONS ·For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 140 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V 2 A 16 W IC Collector current PT Total power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 7.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N4864 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A 1.5 V VBE(sat) Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VBE(on) Base -emitter on voltage IC=0.5A ; VCE=5V 1.5 V ICEX Collector cut-off current VCE=140V;VBE(off)=1.5V TC=150℃ 2.0 5.0 mA ICEO Collector cut-off current VCE=120V; IB=0 10 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=0.5A ; VCE=5V 50 hFE-2 DC current gain IC=2A ; VCE=5V 10 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF fT Transition frequency IC=0.5A ; VCE=5V 50 MHz 2 120 UNIT V 150 Inchange Semiconductor Product Specification 2N4864 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3