ISC 2N4864

Inchange Semiconductor
Product Specification
2N4864
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=2A
·High VCEO:120V (Min)
APPLICATIONS
·For use in general-purpose switching
and linear amplifier applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
7
V
2
A
16
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
7.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
R(th) jc
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2N4864
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1 A ; IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=2A; IB=0.4A
1.5
V
VBE(sat)
Base-emitter saturation voltage
IC=2A; IB=0.4A
2.0
V
VBE(on)
Base -emitter on voltage
IC=0.5A ; VCE=5V
1.5
V
ICEX
Collector cut-off current
VCE=140V;VBE(off)=1.5V
TC=150℃
2.0
5.0
mA
ICEO
Collector cut-off current
VCE=120V; IB=0
10
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=5V
50
hFE-2
DC current gain
IC=2A ; VCE=5V
10
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
fT
Transition frequency
IC=0.5A ; VCE=5V
50
MHz
2
120
UNIT
V
150
Inchange Semiconductor
Product Specification
2N4864
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3