SavantIC Semiconductor Product Specification 2SB886 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD1196 ·DARLINGTON ·High DC current gain ·High current capacity and wide ASO ·Low saturation voltage APPLICATIONS ·Motor drivers, printer ·Hammer drivers ·Relay drivers, ·Voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -8 A ICM Collector current-Peak -12 A PC Collector dissipation TC=25 40 W 1.75 Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SB886 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=? -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA; IE=0 -110 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-8mA VBEsat Base-emitter saturation voltage ICBO UNIT -1.5 V IC=-4A; IB=-8mA -2.0 V Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA fT Transition frequency IC=-4A ; VCE=-5V DC current gain IC=-4A ; VCE=-3V hFE -1.0 MAX 20 1500 MHz 4000 Switching times ton Turn-on time tstg Storage time tf IC=-4A;IB1=-IB2=-8mA RL=12.5E,Duty cycleF1% VCC=50V Fall time 2 0.7 µs 1.4 µs 1.5 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SB886