SAVANTIC 2SB886

SavantIC Semiconductor
Product Specification
2SB886
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1196
·DARLINGTON
·High DC current gain
·High current capacity and wide ASO
·Low saturation voltage
APPLICATIONS
·Motor drivers, printer
·Hammer drivers
·Relay drivers,
·Voltage regulator control.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-8
A
ICM
Collector current-Peak
-12
A
PC
Collector dissipation
TC=25
40
W
1.75
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
SavantIC Semiconductor
Product Specification
2SB886
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; RBE=?
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA; IE=0
-110
V
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-8mA
VBEsat
Base-emitter saturation voltage
ICBO
UNIT
-1.5
V
IC=-4A; IB=-8mA
-2.0
V
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-3.0
mA
fT
Transition frequency
IC=-4A ; VCE=-5V
DC current gain
IC=-4A ; VCE=-3V
hFE
-1.0
MAX
20
1500
MHz
4000
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=-4A;IB1=-IB2=-8mA
RL=12.5E,Duty cycleF1%
VCC=50V
Fall time
2
0.7
µs
1.4
µs
1.5
µs
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
2SB886