Inchange Semiconductor Product Specification 2SD1197 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage ・DARLINGTON ・Complement to type 2SB887 APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 10 A ICP Collector current (Pulse) 15 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1197 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 100 V V(BR)CBO Collector-base breakdown voltage IC=5mA ;IE=0 110 V VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA VBEsat Base-emitter saturation voltage ICBO UNIT 1.5 V IC=5A; IB=10mA 2.0 V Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=5A ; VCE=3V Transition frequency IC=5A ; VCE=5V fT 2 0.9 MAX 1500 4000 20 MHz Inchange Semiconductor Product Specification 2SD1197 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3