isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3719 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 2.0 V hFE DC Current Gain IC= 2A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA 1.0 μs 3.5 μs 0.3 μs 800 B B 6 UNIT V 20 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2A; IB1= 0.4A; IB2= -0.8A; VCC= 250V