isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1439 DESCRIPTION ·High Voltage ·High Switching Speed ·Built-in damper diode ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak 10 A IBP Base Current- Peak 3.5 A Collector Power Dissipation @TC=25℃ 50 Collector Power Dissipation @Ta=25℃ 2.5 Junction Temperature 150 ℃ -65-150 ℃ PC Tj Tstg W Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1439 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.75A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.75A 1.5 V hFE DC Current Gain IC= 2A ; VCE= 10V ICBO Collector Cutoff Current VECF fT 5 UNIT V 4 12 VCB= 750V; IE= 0 50 μA VCB= 1500V; IE= 0 1.0 mA C-E Diode Forward Voltage IF= 2A 2.2 V Transition Frequency IC= 0.5A ; VCE= 10V 2 MHz Switching Times ts Storage Time 7 μs 0.75 μs IC= 2A; IB= 0.75A; Lleak= 5μH tf Fall Time isc Website：www.iscsemi.cn