isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD823 DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 90V(Min.) APPLICATIONS ·Designed for B/W TV horizontal output applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 200 90 V V 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD823 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 90 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current 0.1 mA IEBO Emitter Cutoff Current 0.1 mA hFE DC Current Gain B B fT Current-Gain—Bandwidth Product m e s isc tf Fall Time IC= 5A; IB1= 0.6A w. isc Website：www.iscsemi.cn TYP. B VCB= 40V; IE= 0 w w MIN VEB= 4V; IC= 0 IC= 3A; VCE= 5V IC= 1A; VCE= 5V 2 n c . i MAX UNIT 20 15 MHz 1.0 μs