isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB922 DESCRIPTION ·High Collector Current:: IC= -12A ·Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -6A ·Complement to Type 2SD1238 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT -120 V -80 V -6 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A PC Total Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB922 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -0.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain fT Turn-on Time tstg Storage Time n c . i m e s c s .i w w w ton IC= -1A; VCE= -5V RL= 10Ω, VCC= -50V IC= -5A; IB1= -IB2= -0.5A Fall Time hFE-1 Classifications Q R S 70-140 100-200 140-280 isc Website：www.iscsemi.cn MIN TYP. B IC= -6A; VCE= -2V Current-Gain—Bandwidth Product Switching times tf CONDITIONS 2 70 MAX UNIT 280 30 20 MHz 0.2 μs 0.7 μs 0.1 μs