isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3 A PC Total Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4159 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 180 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 10mA; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 300mA; VCE= 5V Current-Gain—Bandwidth Product IC= 50mA; VCE= 10V 100 MHz Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 23 pF 0.15 μs 0.81 μs 0.48 μs fT COB 0.3 60 V 200 Switching Times ton Turn-on Time tstg Storage Time tf IC= 0.5A, RL= 40Ω, IB1= -IB2= 50mA, VCC= -20V; PW= 20μs Fall Time hFE Classifications D E 60-120 100-200 isc Website：www.iscsemi.cn 2