CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM2310PT CURRENT 4.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. (2) 0.95 (3) 1.7~2.1 2.7~3.1 0.95 CONSTRUCTION (1) 0.3~0.51 * N-Channel Enhancement 1.2~1.9 MARKING * 10 0.89~1.3 0.085~0.2 0~0.1 0.3~0.6 D (3) CIRCUIT 2.1~2.95 (1) G Dimensions in millimeters S (2) Absolute Maximum Ratings Symbol SC-59/SOT-346 TA = 25°C unless otherwise noted Parameter CHM2310PT VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±12 Maximum Drain Current - Continuous 4.8 ID Units V V A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 20.0 1250 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 100 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2006-08 RATING CHARACTERISTIC CURVES ( CHM2310PT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 30 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 30 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 1 µA VGS = 12V,VDS = 0 V +100 nA VGS = -12V, VDS = 0 V -100 nA 1.4 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance Dynamic Characteristics gFS Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = VGS, ID = 250 µA 0.7 VGS=10V, ID=4.8A 25 34 VGS=4.5V, ID=4A 32 40 VDS =10V, ID = 4.0A 5 S 5 610 S 125 pF VDS = 10V, ID = 4.8A VDS = 15V, VGS = 0V, f = 1.0 MHz mΩ 80 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge 9 VDS=15V, ID=4.8A 12 nC 2.3 VGS=4.5V 2.2 t on Turn-On Time V DD= 15V 9 20 tr Rise Time I D = 4.8A , VGS = 10 V 3 10 t off Turn-Off Time RGEN= 3 Ω 35 70 tf Fall Time 4 10 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 1.0A , VGS = 0 V (Note 1) (Note 2) 4.8 A 1.0 V RATING CHARACTERISTIC CURVES ( CHM2310PT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 50 10 V G S =1 0 , 8 , 6 V 8 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 40 V G S =5 V 30 VG S =4 V 20 10 0 1.0 4.0 2.0 3.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 4 TJ=125°C 0 5.0 0 2.2 VGS=10V ID=4.8A R DS(on) , NORMALIZED 4 3 2 1 0 0 3 6 Qg , TOTAL GATE CHARGE (nC) 9 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA THRESHOLD VOLTAGE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=15V ID=4.8A Vth , NORMALIZED GATE-SOURCE 3.0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge 5 1.3 TJ=-55°C 2 VG S =3 V 0 TJ=25°C 6 1.9 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200