JMNIC 2SC4157

JMnic
Product Specification
2SC4157
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(I) package
・High VCEO
・High speed switching
APPLICATIONS
・Switching regulator and high voltage
switching applications
・High speed DC-DC converter applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
8
V
IC
Collector current-DC
10
A
ICM
Collector current-peak
20
A
IB
Base current
5
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SC4157
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ,IB=0
450
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ,IE=0
600
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
2.0
V
ICBO
Collector cut-off current
VCB=500V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=8V; IC=0
1.0
mA
hFE
DC current gain
IC=5A ; VCE=5V
0.5
μs
2.5
μs
0.5
μs
15
Switching times
tr
tstg
tf
Rise time
Storage time
VCC≈200V
IB1=-IB2=0.5A ; RL=40Ω
Fall time
2
JMnic
Product Specification
2SC4157
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3