Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD992-Z TO-252 2.3 +0.1 0.60-0.1 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.1 0.80-0.1 2.30 +0.8 0.50-0.7 +0.25 2.65 -0.1 +0.2 9.70 -0.2 Low VCE(sat). Unit: mm +0.1 -0.1 +0.28 1.50 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 0.50 -0.15 Features 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 2 A Collector Current (pulse) * ICP 3 A Total power dissipation PT 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse Test PW 10ms, Duty Cycle 50%. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO DC current gain * hFE Testconditons Min Typ VCB = 20 V, IE = 0 VCE = 0.5 V, IC = 0.1 A 35 VCE = 0.5 V, IC = 2.0 A 50 Max Unit 10 nA 200 Collector saturation voltage * VCE(sat) IC = 2.0 A, IB = 40 mA 0.3 0.5 V Base saturation voltage * VBE(sat) IC = 2.0 A, IB = 40 mA 0.95 1.5 V * Pulsed: PW 350 ìs, duty cycle 2% hFE Classification Marking N M L K hFE 35 80 60 120 80 120 100 200 www.kexin.com.cn 1