Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1115 Features World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -6 V IC -1 A Collector current (pulse) * IC -2 A Total power dissipation PT 2 W Junction temperature Tj 150 Tstg -55 to +150 Collector current Storage temperature range * Pulsed: PW 10 ms, duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -60 V, IE = 0 -100 nA Emitter cutoff current IEBO VEB = -6.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -2.0 V, IC = -100 mA 135 VCE = -2.0 V, IC = -1.0A 100 340 600 200 Collector saturation voltage * VCE(sat) IC = -1.0A, IB = -50 mA -0.2 -0.3 V Base saturation voltage * VBE(sat) IC = -1.0A, IB = -50 mA -0.9 -1.2 V Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW VBE VCE = -2.0 V, IC = -50 mA -600 fT VCE = -2.0 V, IE = -100 mA 80 VCB = -10 V, IE = 0 , f = 1.0 MHz Cob 350 ìs, duty cycle -700 V 120 MHz 25 pF 2% hFE Classification Marking YM YL YK hFE 135 270 200 400 300 600 www.kexin.com.cn 1