KEXIN 2SD999

Transistors
SMD Type
NPN Silicon Epitaxial Transistor
2SD999
Features
World standard miniature package:SOT-89.
Low collector saturation voltage.
Excellent dc current gain linearity.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
1
A
Collector Current (pulse) *
IC
1.5
A
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Pulse Test PW
10ms, Duty Cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 30 V, IE = 0 A
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0 A
DC current gain *
hFE
Min
Typ
VCE = 1.0 V, IC = 100 mA
90
200
VCE = 1.0 V, IC = 1.0A
50
140
Max
Unit
100
nA
100
nA
400
Collector saturation voltage *
VCE(sat) IC = 1.0 A, IB = 0.1A
0.21
0.4
V
Base saturation voltage *
VBE(sat) IC = 1.0 A, IB = 0.1A
1
1.2
V
630
700
mV
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
VBE
VCE = 6.0 V, IC = 10 mA
fT
VCE = 6.0 V, IE = -10 mA
130
MHz
VCB = 6 V, IE = 0, f = 1.0 MHz
22
pF
Cob
350 ìs, duty cycle
600
2%
hFE Classification
Marking
CM
CL
CK
hFE
90 180
135 270
200 400
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