Transistors SMD Type Silicon PNP Transistor 2SB768 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 2.30 +0.8 0.50-0.7 0.127 max +0.25 2.65 -0.1 +0.2 9.70 -0.2 High Voltage:VCBO=-150V Unit: mm +0.1 -0.1 +0.28 1.50 -0.1 Features +0.15 0.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-to-Base Voltage VCBO -200 V Collector-to-Emitter Voltage VCEO -150 V Emitter-to-Base Voltage VEBO -5 V Collector Current IC -2 A Collector Current (Pulse) *1 ICP -3 A PT 2 W Total Power Dissipation *2 Ta=25 Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 *1 PW 10ms,.Duty Cycle 50% *2 when mounted on ceramic substrate of 7.5cm2 X 0.7mm Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cutoff Current ICBO VCB=-150V, IE=0 -50 ìA Emitter Cutoff Current IEBO VEB=-4V, IC=0 -50 ìA DC Current Gain * hFE VCE=-10V, IC=-0.4A Collector-to-Emitter Saturation Voltage * Gain Badnwidth Product 40 80 200 -1.0 VCE(sat) IC=-500mA, IB=-50mA -0.15 fT VCE=-10V,IE=-0.4mA 10 V MHz * Pulsed :pw 350ìs,Duty Cycle 2% hFE Classification Marking M L K hFE 40 to 80 60 to 120 100 to 200 www.kexin.com.cn 1