Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1899-Z 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.2 9.70 -0.2 High hFE. +0.15 0.50 -0.15 Low VCE(sat). 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current (DC) IC 3 A Collector Current (pulse) *1 ICP 5 A Base current IB 0.5 A Total power dissipation Ta = 25 PT *2 2 W Total power dissipation TC = 25 PT 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1 Pulse Test PW 10ms, Duty Cycle 50%. *2 Mounted on ceramic substrate of 7.5mm2x0.7mm www.kexin.com.cn 1 Transistors SMD Type 2SD1899-Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit Collector cutoff current ICBO VCB = 60 V, IE = 0 10 ìs Emitter cutoff current IEBO VEB = 7 V, IC = 0 10 ìA hFE DC current gain * VCE = 2V, IC = 0.2 A 60 VCE = 2V, IC = 0.6 A 100 VCE = 2V, IC = 2.0 A 50 400 Collector saturation voltage * VCE(sat) IC = 1.5 A, IB = 0.15 A 0.14 0.25 Base saturation voltage * VBE(sat) IC = 1.5 A, IB = 0.15 A 0.93 1.2 VCE = 5 V, IE = -1.5 A 120 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF Gain bandwidth product fT Output capacitance Cob V V Turn-on time ton IC = 1 A,VCC = 10 V 0.15 0.5 ìs Storage time tstg IB1=-IB2=0.1A 0.75 2 ìs RL=10Ù 0.2 0.5 ìs Fall time * Pulsed: PW tf 350 ìs, duty cycle 2% hFE Classification 2 Min Marking M L K hFE 100 200 160 320 200 400 www.kexin.com.cn