IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1254S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15 0.50-0.15 +0.2 9.70-0.2 Suitable for switching regulator and DC-DC converter 1 Gate 2 Drain +0.15 4.60-0.15 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 120 V Gate to source voltage VGSS Drain current (DC) Unit 20 V ID 3 A Drain current(pulse) * ID 12 A Power dissipation PD 20 W Channel temperature Tch 150 Tstg -55 to +150 Storage temperature * PW 10 s, duty cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=10mA,VGS=0 Gate to source breakdown voltage VGSS ID= Drain cut-off current IDSS VDS=100V,VGS=0 IGSS VGS= Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance 100 A,VDS=0 RDS(on) Typ VDS=10V,ID=2A Max V 20 V 100 10 1.0 2.4 2.0 4.0 0.30 0.40 VGS=4V,ID=2A 0.35 0.55 VDS=10V,VGS=0,f=1MHZ A A V s VGS=10V,ID=2A Ciss Unit 120 16V,VDS=0 VGS(off) VDS=10V,ID=1mA Yfs Min 420 pF Output capacitance Coss 190 pF Reverse transfer capacitance Crss 25 pF Turn-on delay time td(on) 5 ns Rise time Turn-off delay time Fall time tr 20 ns td(off) 150 ns tf 45 ns ID=2A,VGS(on)=10V,RL=15 www.kexin.com.cn 1