KEXIN 2SK1254S

IC
MOSFET
SMD Type
Silicon N-Channel MOSFET
2SK1254S
Features
TO-252
Unit: mm
Low on-resistance
High speed switching
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
+0.15
0.50-0.15
+0.2
9.70-0.2
Suitable for switching regulator and DC-DC converter
1 Gate
2 Drain
+0.15
4.60-0.15
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
120
V
Gate to source voltage
VGSS
Drain current (DC)
Unit
20
V
ID
3
A
Drain current(pulse) *
ID
12
A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Tstg
-55 to +150
Storage temperature
* PW
10
s, duty cycle
1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain to source breakdown voltage
VDSS
ID=10mA,VGS=0
Gate to source breakdown voltage
VGSS
ID=
Drain cut-off current
IDSS
VDS=100V,VGS=0
IGSS
VGS=
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
100
A,VDS=0
RDS(on)
Typ
VDS=10V,ID=2A
Max
V
20
V
100
10
1.0
2.4
2.0
4.0
0.30
0.40
VGS=4V,ID=2A
0.35
0.55
VDS=10V,VGS=0,f=1MHZ
A
A
V
s
VGS=10V,ID=2A
Ciss
Unit
120
16V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs
Min
420
pF
Output capacitance
Coss
190
pF
Reverse transfer capacitance
Crss
25
pF
Turn-on delay time
td(on)
5
ns
Rise time
Turn-off delay time
Fall time
tr
20
ns
td(off)
150
ns
tf
45
ns
ID=2A,VGS(on)=10V,RL=15
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