KEXIN 2SD1419

Transistors
SMD Type
NPN Silicon epitaxial Transistor
2SD1419
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
5
V
Collector current
Collector peak current
Collector power dissipation
IC
1
A
iC(peak)*1
2
A
PC*2
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
*1 PW
10ms, duty cycle 20%
*2 Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
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Transistors
SMD Type
2SD1419
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO
IC = 10 ìA, IE = 0
120
V
Collector to emitter breakdown voltage
V(BR)CEO
IC = 1 mA, RBE =
100
V
Emitter to base breakdown voltage
V(BR)EBO
IE= 10 ìA, IC = 0
5
V
Collector cutoff current
ICBO
DC current transfer ratio
hFE
Collector to emitter saturation voltage
VCB = 100 V, IE = 0
10
VCE = 5 V, IC = 150 mA*
60
VCE = 5 V, IC = 500 mA*
30
ìA
200
VCE(sat)
IC = 500 mA, IB = 50 mA*
1
V
Base to emitter voltage
VBE
VCE = 5 V, IC = 150 mA*
1.5
V
Gain bandwidth product
fT
VCE = 5 V, IC = 150 mA*
140
MHz
VCB = 10 V, IE = 0, f = 1 MHz
12
pF
Collector output capacitance
Cob
*Pulse test
hFE Classification
2
Testconditons
Marking
DD
DE
hFE
60 120
100 200
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