Inchange Semiconductor Product Specification 2N5193 2N5194 2N5195 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N5190/5191/5192 ・Excellent safe operating area APPLICATIONS ・For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 电半 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER 固 CONDITIONS 2N5193 Collector-base voltage 2N5194 2N5195 VCEO VEBO CHA Collector-emitter voltage IN 2N5194 N O C EMI Open emitter Open base 2N5195 Emitter-base voltage UNIT -40 NG S 2N5193 R O T DUC VALUE Open collector -60 V -80 -40 -60 V -80 -5 V IC Collector current -4 A ICM Collector current-Peak -7 A IB Base current -1 A PD Total power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 3.12 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N5193 2N5194 2N5195 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5193 VCEO(SUS) Collector-emitter sustaining voltage 2N5194 MIN TYP. MAX UNIT -40 IC=-0.1A; IB=0 V -60 -80 2N5195 VCEsat-1 Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.6 V VCEsat-2 Collector-emitter saturation voltage IC=-4A ;IB=-1A -1.2 V Base-emitter on voltage IC=-1.5A ; VCE=-2V -1.2 V -1.0 mA -0.1 mA -0.1 -2.0 -0.1 -2.0 -0.1 -2.0 mA -1.0 mA VBE ICEO ICBO Collector cut-off current IEBO hFE-1 VCE=-40V; IB=0 2N5194 VCE=-60V; IB=0 2N5195 VCE=-80V; IB=0 2N5193 VCB=-40V; IE=0 2N5194 VCB=-60V; IE=0 2N5195 VCB=-80V; IE=0 体 导 电半 Collector cut-off current 固 ICEX 2N5193 2N5193 N O C EMI VCE=-40V; VBE(off)=-1.5V TC=125℃ VCE=-60V; VBE(off)=-1.5V TC=125℃ VCE=-80V; VBE(off)=-1.5V TC=125℃ S G N HA Collector cut-off current INC 2N5194 2N5195 Emitter cut-off current DC current gain R O T DUC VEB=-5V; IC=0 2N5193 2N5194 25 100 20 80 IC=-1.5A ; VCE=-2V 2N5195 2N5193 10 hFE-2 DC current gain 2N5194 IC=-4A ; VCE=-2V 2N5195 fT Transition frequency 7 IC=-1A ; VCE=-10V;f=1MHz 2 2 MHz Inchange Semiconductor Product Specification 2N5193 2N5194 2N5195 Silicon PNP Power Transistors PACKAGE OUTLINE 体 导 电半 固 N O C EMI INC S G N HA Fig.2 Outline dimensions 3 R O T DUC