Inchange Semiconductor Product Specification 2N6470 2N6471 2N6472 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area ・High gain at high current APPLICATIONS ・General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6470 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6471 Open emitter 70 2N6472 90 2N6470 40 2N6471 Emitter-base voltage UNIT 50 Open base 2N6472 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 15 A IB Base current 5 A PT Total power dissipation 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.4 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2N6470 2N6471 2N6472 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N6470 VCEO(SUS) Collector-emitter sustaining voltage 2N6471 MIN TYP. MAX UNIT 40 IC=0.2A ;IB=0 V 60 80 2N6472 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 3.5 V VBE Base-emitter on voltage IC=15A ; VCE=4V 3.5 V ICEO Collector cut-off current VCE=1/2Rated VCEO; IB=0 1.0 mA ICEX Collector cut-off current VCE= Rated VCEO; VBE=-1.5V TC=150℃ 0.2 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 20 hFE-2 DC current gain IC=15A ; VCE=4V 5 Transition frequency IC=0.5A ; VCE=10V 4 fT 2 150 Inchange Semiconductor Product Specification 2N6470 2N6471 2N6472 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3