isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@ IC= -3A ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD1414 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous -0.3 A Collector Power Dissipation @Ta=25℃ 2 W PC Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1024 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1024 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -20 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -2V 2000 hFE-2 DC Current Gain IC= -3A; VCE= -2V 1000 -80 UNIT V Switching Times ton Turn-on Time tstg Storage Time tf VCC≈ -30V, RL= 10Ω, IC= -3A; IB1= -IB2= -6mA, Fall Time isc Website：www.iscsemi.cn 2 0.15 μs 0.80 μs 0.40 μs