isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 1000( Min.) @ IC= 10A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 10A APPLICATIONS ·For low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous ±10 A ICM Collector Current-Peak ±20 A IB Base Current-Continuous 1 A Collector Power Dissipation @Ta=25℃ 3.5 W PC Collector Power Dissipation @TC=25℃ 65 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD1670 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1670 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MIN TYP. MAX UNIT IC= 10A; IB= 25mA 1.5 V Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 10A; VCE= 2V 1000 30000 Switching Times ton Turn-on Time tstg Storage Time Fall Time tf VCC≈ 50V, RL= 5Ω, IC= 10A; IB1= -IB2= 25mA, hFE-1 Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 isc Website：www.iscsemi.cn 2 1.0 μs 5.0 μs 2.0 μs