ISC 2SD325

Inchange Semiconductor
Product Specification
2SD325
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SB511
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
35
V
VCEO
Collector-emitter voltage
Open base
35
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1.5
A
ICM
Collector current -peak
3.0
A
PC
Collector dissipation
Ta=25℃
1.75
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-50~150
℃
Inchange Semiconductor
Product Specification
2SD325
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1.5A; IB=0.15A
1.0
V
VBE
Base-emitter on voltage
IC=1A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=20V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
40
hFE-2
DC current gain
IC=0.1A ; VCE=2V
35
Transition frequency
IC=0.5A ; VCE=5V
fT
‹
CONDITIONS
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
MIN
TYP.
MAX
35
UNIT
V
320
8
MHz
Inchange Semiconductor
Product Specification
2SD325
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3