ISC 2SB1085A

Inchange Semiconductor
Product Specification
2SB1085A
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SD1562A
・Low collector saturation voltage
APPLICATIONS
・Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
导体
半
电
固
SYMBOL
VCBO
VCEO
VEBO
M
E
S
GE
PARAMETER
N
A
H
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
R
O
T
UC
D
N
O
IC
Absolute maximum ratings(Ta=25℃)
VALUE
UNIT
-160
V
-160
V
-5
V
IC
Collector current
-1.5
A
ICM
Collector current-peak
-3.0
A
PC
Collector power dissipation
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1085A
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50μA ,IE=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA ,IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-2.0
V
VBEsat
Base-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
μA
hFE
DC current gain
IC=-0.1A ; VCE=-5V
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
COB
固电
fT
‹
体
半导
CONDITIONS
Transition frequency
G
N
A
CH
IN
hFE classifications
D
60-120
E
100-200
2
TYP.
MAX
R
O
T
UC
60
OND
IC
M
E
ES
IC=-0.1A ; VCE=-5V
MIN
UNIT
200
30
pF
50
MHz
Inchange Semiconductor
Product Specification
2SB1085A
Silicon PNP Power Transistors
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3