Inchange Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SD1562A ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage CONDITIONS Open emitter Open base Open collector R O T UC D N O IC Absolute maximum ratings(Ta=25℃) VALUE UNIT -160 V -160 V -5 V IC Collector current -1.5 A ICM Collector current-peak -3.0 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -160 V V(BR)CBO Collector-base breakdown voltage IC=-50μA ,IE=0 -160 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-0.1A ; VCE=-5V Output capacitance IE=0 ; VCB=-10V,f=1MHz COB 固电 fT 体 半导 CONDITIONS Transition frequency G N A CH IN hFE classifications D 60-120 E 100-200 2 TYP. MAX R O T UC 60 OND IC M E ES IC=-0.1A ; VCE=-5V MIN UNIT 200 30 pF 50 MHz Inchange Semiconductor Product Specification 2SB1085A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3