Inchange Semiconductor Product Specification 2SB1273 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -3 A ICM Collector current-peak -8 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1273 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ,RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.4 -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.8 -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 70 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 60 pF fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz VCEsat CONDITIONS hFE-1 Classifications Q R S 70-140 100-200 140-280 2 MIN TYP. MAX UNIT 280 Inchange Semiconductor Product Specification 2SB1273 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3