Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD1133/1134 APPLICATIONS ・Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SB857 Emitter-base voltage UNIT -70 V -50 Open base 2SB858 VEBO VALUE V -60 Open collector -5 V IC Collector current -4 A ICP Collector current-peak -8 A PC Collector power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER CONDITIONS 2SB857 Collector-emitter breakdown voltage MIN TYP. MAX UNIT -50 IC=-50mA; RBE=∞ 2SB858 V -60 V(BR)CBO Collector-base breakdown voltage IC=-10μA; IE=0 -70 V V(BR)EBO Emitter-base breakdown votage IE=-10μA; IC=0 -5 V Collector-emitter saturation voltage IC=-2 A;IB=-0.2 A -1.0 V VBE Base-emitter voltage IC=-1A ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-50V; IE=0 -1 μA hFE-1 DC current gain IC=-1A ; VCE=-4V 60 hFE-2 DC current gain IC=-0.1A ; VCE=-4V 35 Transition frequency IC=-0.5A ; VCE=-4V VCEsat fT hFE-1 classifications B C D 60-120 100-200 160-320 2 320 15 MHz Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB857 2SB858 Silicon PNP Power Transistors 4