Inchange Semiconductor Product Specification 2SA1062 Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SC2486 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -7 A ICM Collector current-peak -12 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1062 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBE Base-emitter on voltage IC=-5A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 hFE-3 DC current gain IC=-5A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS Q P 40-80 60-120 100-200 TYP. 2 MAX -120 UNIT V B hFE-2 Classifications R MIN 200 20 MHz Inchange Semiconductor Product Specification 2SA1062 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3