ISC 2SC1173

Inchange Semiconductor
Product Specification
2SC1173
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Complement to type 2SA473
・Collector current :IC=3A
・Collector dissipation:[email protected]=25℃
APPLICATIONS
・Low frequency power amplifier
・Power regulator
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
固
SYMBOL
VCBO
VCEO
VEBO
M
E
S
GE
PARAMETER
N
A
H
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
R
O
T
UC
D
N
O
IC
Absolute maximum ratings (Ta=25℃)
CONDITIONS
VALUE
UNIT
Open emitter
30
V
Open base
30
V
Open collector
5
V
3
A
10
W
IC
Collector current (DC)
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1173
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
30
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA ;IE=0
30
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
Collector-emitter saturation voltage
IC=2A IB=0.2A
0.8
V
VBE
Base-emitter on voltage
IC=0.5A ; VCE=2V
1.0
V
ICBO
Collector cut-off current
VCB=20V;IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
70
hFE-2
DC current gain
IC=2.5A ; VCE=2V
25
Output capacitance
IE=0; VCB=10V;f=1MHz
VCEsat
COB
固
fT
‹
导体
半
电
CONDITIONS
Transition frequency
IN
G
N
A
CH
hFE-1 classifications
O
70-140
Y
120-240
2
TYP.
MAX
UNIT
240
R
O
T
UC
OND
IC
M
E
ES
IC=0.5A ; VCE=2V
MIN
35
pF
100
MHz
Inchange Semiconductor
Product Specification
2SC1173
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3