Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA473 ・Collector current :IC=3A ・Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ・Low frequency power amplifier ・Power regulator PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage R O T UC D N O IC Absolute maximum ratings (Ta=25℃) CONDITIONS VALUE UNIT Open emitter 30 V Open base 30 V Open collector 5 V 3 A 10 W IC Collector current (DC) PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 30 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=2A IB=0.2A 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=20V;IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 Output capacitance IE=0; VCB=10V;f=1MHz VCEsat COB 固 fT 导体 半 电 CONDITIONS Transition frequency IN G N A CH hFE-1 classifications O 70-140 Y 120-240 2 TYP. MAX UNIT 240 R O T UC OND IC M E ES IC=0.5A ; VCE=2V MIN 35 pF 100 MHz Inchange Semiconductor Product Specification 2SC1173 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3